Deposition apparatus, deposition target structure, and method

ABSTRACT

A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling down has also increased the complexity ofprocessing and manufacturing ICs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-2 are views of a deposition apparatus according to embodimentsof the present disclosure.

FIGS. 3A-3G are views of a deposition target structure according tovarious aspects of the present disclosure.

FIGS. 4A-4E are views illustrating a process for forming a depositiontarget according to various aspects of the present disclosure.

FIG. 5 is a flow chart of the process according to various aspects ofthe present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature’s relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Terms such as “about,” “roughly,” “substantially,” and the like may beused herein for ease of description. A person having ordinary skill inthe art will be able to understand and derive meanings for such terms.For example, “about” may indicate variation in a dimension of 20%, 10%,5% or the like, but other values may be used when appropriate. A largefeature, such as the longest dimension of a semiconductor fin may havevariation less than 5%, whereas a very small feature, such as thicknessof an interfacial layer may have variation of as much as 50%, and bothtypes of variation may be represented by the term “about.”“Substantially” is generally more stringent than “about,” such thatvariation of 10%, 5% or less may be appropriate, without limit thereto.A feature that is “substantially planar” may have variation from astraight line that is within 10% or less. A material with a“substantially constant concentration” may have variation ofconcentration along one or more dimensions that is within 5% or less.Again, a person having ordinary skill in the art will be able tounderstand and derive appropriate meanings for such terms based onknowledge of the industry, current fabrication techniques, and the like.

Semiconductor fabrication generally involves the formation of electroniccircuits by performing multiple depositions, etchings, annealings,and/or implantations of material layers, whereby a stack structureincluding many semiconductor devices and interconnects between isformed. Dimension scaling (down) is one technique employed to fit evergreater numbers of semiconductor devices in the same area. However,dimension scaling is increasingly difficult in advanced technologynodes. Deposition techniques encounter ever more stringent layerdeposition uniformity specifications, while layer thicknesses decreaseto form smaller features. Target uniformity in physical vapor deposition(PVD) apparatuses, for example, is one metric effecting depositionuniformity. Target bonding influences target structure shear stress andthermal conductivity, as well as process power and film yield.

A target for PVD generally includes a deposition material layer attachedto a base plate, for example, by an adhesion layer including a metal,such as indium. Embodiments of the disclosure describe a depositionapparatus in which a target includes an adhesion layer foundation on thebase plate of the target and inside the adhesion layer, whicheffectively reduces waviness (one measure of non-uniformity) of theadhesion layer. The reduced waviness of the adhesion layer improvesuniformity of the deposition material layer formed thereon, which inturn improves deposition uniformity of material of the depositionmaterial layer onto a semiconductor wafer processed by the depositionapparatus.

FIGS. 1-2 illustrate a deposition apparatus 100 (also referred to as“PVD system 100”) according to some embodiments. The depositionapparatus 100 is a PVD apparatus or system, in some embodiments. Theviews depicted in FIGS. 1-2 are cross-sectional views to illustrateinternal features of the PVD system 100. In FIG. 1 , the PVD system 100includes a PVD chamber 150 (or, “process chamber 150”) having a PVDvolume 116 in which a target material (or, “deposition material layer”)of a target 102 may be deposited onto a wafer 118. In some embodiments,the PVD system 100 performs a PVD process to form a thin film on asurface 119 of the wafer 118, such as for fabrication of one or moresemiconductor devices. The thin film comprises the target material. Insome embodiments, the thin film is at least one of a metal hard mask(MHM) film or other suitable thin film.

A wafer support 128 of the PVD system 100 is in the PVD chamber 150. Thewafer support 128 is configured to support the wafer 118 in the PVDvolume 116. The wafer support 128 comprises at least one of a waferchuck, an electrostatic chuck, a pedestal, or other suitable structure.In some embodiments, the wafer support 128 comprises a heater configuredto heat the wafer 118, such as during performance of the PVD process.

The PVD chamber 150 comprises an inlet 136 configured to introduce afirst gas 140 into the PVD chamber 150. In some embodiments, the PVDchamber 150 is coupled to a tube at the inlet 136. The first gas 140exits the tube and enters the PVD chamber 150 via the inlet 136. Theinlet 136 corresponds to an opening in at least one of a chamber wall134 of the PVD chamber 150 and/or other portion of the PVD chamber 150.In some embodiments, the inlet 136 is between a first sidewall 138 ofthe chamber wall 134 of the PVD chamber 150 and a second sidewall 142 ofthe chamber wall 134 of the PVD chamber 150. In some embodiments, thePVD system 100 comprises a first pump (not shown) configured to conductthe first gas 140 into the PVD chamber 150 via at least one of the tubeor the inlet 136 of the PVD chamber 150. One or more valves, sealants,O-rings, etc. can exist at the inlet 136 to provide control over theflow of the first gas 140 from the tube to the PVD chamber 150. Thefirst gas 140 comprises at least one of argon (Ar) or other suitablegas. In some embodiments, the PVD system 100 comprises a second pump 132in the PVD chamber 150. The second pump 132 is at least one of a vacuumpump or other suitable pump. The second pump 132 configured to maintaina pressure of the first gas 140 in the PVD chamber 150, such as duringthe PVD process. In some embodiments, the PVD system 100 comprises acontroller (not shown), such as a mass flow controller (MFC), configuredto control a pressure of the first gas 140 in the PVD chamber 150. Thecontroller controls at least one of the first pump, the one or morevalves at the inlet 136, the second pump 132, or one or more othersuitable components of the PVD system 100 based upon one or more signalsreceived from one or more sensors of the PVD system 100. The one or moresensors comprise at least one of one or more pressure sensors (such aspressure gauges) or one or more other suitable sensors. The one or morepressure sensors comprise at least one of a pressure sensor positionedin or on the PVD chamber 150, a pressure sensor positioned in the PVDvolume 116, a pressure sensor positioned in or on the first pump, apressure sensor positioned in or on the second pump 132, a pressuresensor positioned in or on the tube, a pressure sensor positioned in oron the wafer support 128, a pressure sensor positioned on the chamberwall 134, a pressure sensor positioned in or on the inlet 136, or apressure sensor positioned at another suitable location. The one or morepressure signals are indicative of one or more pressures. The controllercontrols at least one of the first pump, the one or more valves at theinlet 136, the second pump 132, or one or more other suitable componentsof the PVD system 100 based upon the one or more pressures. Otherstructures and/or configurations of the PVD chamber 150, the first pump,the second pump 132, the controller, and/or the inlet 136 are within thescope of the present disclosure.

A backplane structure 120 (or “base plate 120”) of the PVD system 100overlies the target 102. The target 102 is coupled to at least one ofthe backplane structure 120 or other portion of the PVD chamber 150 tomaintain a position of the target 102 between the backplane structure120 and the wafer 118. Other structures and/or configurations of thebackplane structure 120, the target 102, and/or the PVD chamber 150 arewithin the scope of the present disclosure. In some embodiments, thebackplane structure 120 is or comprises copper, aluminum, molybdenum, analloy of any of the above, or other suitable material.

The PVD system 100 comprises at least one of a cover structure 124 (suchas a cover ring), a shielding structure 126, or a deposition structure130 (such as a deposition ring). The shielding structure 126 isconfigured to inhibit dissipation of the first gas 140 from the PVDvolume 116. The PVD chamber 150 comprises an inner chamber wall 122underlying the backplane structure 120. In some embodiments, the firstgas 140 is conducted into the PVD volume 116 via a path 154 between thecover structure 124 and the shielding structure 126. Other structuresand/or configurations of the cover structure 124, the shieldingstructure 126, the inner chamber wall 122, and/or the depositionstructure 130 are within the scope of the present disclosure.

The target 102 comprises at least one of titanium (Ti), aluminum (Al),titanium nitride (TiN), titanium aluminum (TiAl), copper (Cu), cobalt(Co), aluminum copper (AlCu), copper aluminum (CuAl), copper manganese(CuMn), tantalum (Ta), or other suitable material. The target 102overlies the wafer 118. An edge 108 of the target 102 extends from afirst surface 104 of the target 102 to a second surface 106 of thetarget 102, opposite the first surface 104 of the target 102. The firstsurface 104 of the target 102 at least one of underlies, is in directcontact with, or is in indirect contact with the backplane structure120. The second surface 106 of the target 102 faces the wafer 118. Otherstructures and/or configurations of the target 102 are within the scopeof the present disclosure.

In some embodiments, the edge 108 of the target 102 is tapered at anangle 152 (shown in FIG. 1 ) with respect to the first surface 104 ofthe target 102. The edge 108 of the target 102 extends at the angle 152from the first surface 104 of the target 102 to the second surface 106of the target 102. In some embodiments, the edge 108 of the target 102extends from the first surface 104 of the target 102 to the secondsurface 106 of the target 102 vertically and/or perpendicular to adirection of extension of at least one of the first surface 104 of thetarget 102 or the second surface 106 of the target 102 (shown in FIG. 2). Other structures and/or configurations of the target 102 are withinthe scope of the present disclosure. In some embodiments, surfaceroughness of the edge 108 of the target 102 may be adjusted, forexample, by sandblasting to prevent peeling and/or arcing.

The PVD system 100 comprises a first power generator 144 electricallycoupled to the PVD chamber 150, such as to the backplane structure 120or other portion of the PVD chamber 150. The first power generator 144is configured to generate a power, such as at least one of a RF power ora direct current (DC) power. The PVD system 100 comprises one or moremagnets 146. In some embodiments, the PVD system 100 comprises a secondpower generator (not shown) electrically coupled to the PVD chamber 150,such as to the wafer support 128 or other portion of the PVD chamber150. The second power generator is configured to generate a bias power.The first gas 140 enters the PVD volume 116. The PVD system 100 isconfigured to establish a plasma (such as a plasma 510 shown in FIG. 5 )in the PVD volume 116 from the first gas 140. The plasma is used fordepositing the target material of the target 102 onto the wafer 118,such as to form the thin film on the surface 119 of the wafer 118. Thetarget material (such as atoms and/or molecules of the target 102) isdislodged from the target 102 and converted into vapor by the plasma(such as by means of gaseous ions of the plasma bombarding and/orimpinging upon the target 102). The vapor undergoes condensation on thewafer 118, such as to form the thin film on the surface 119 of the wafer118. The PVD system 100 establishes the plasma using at least one of thefirst power generator 144, the second power generator, the one or moremagnets 146, or one or more other suitable components of the PVD system100. At least one of the first power generator 144, the second powergenerator, or the one or more magnets 146 are controlled to at least oneof control an ion bombardment force in the PVD volume 116 or to obtainone or more desired properties of the thin film formed on the surface119 of the wafer 118. Interactions among the first power generator 144,the second power generator, the one or more magnets 146, and/or thewafer support 128 are within the scope of the present disclosure.

FIGS. 3A-3D illustrate perspective views of the PVD system 100 accordingto some embodiments. FIG. 3A illustrates the backplane structure 120overlying the target 102, according to some embodiments. In someembodiments, such as shown in FIG. 3A, the target 102 is attached to thebackplane structure 120 by an adhesion structure 300 having thicknesst₃₀₀. The target 102, the backplane structure 120, and the adhesionstructure 300 may be referred to collectively as a “deposition targetstructure” (not separately labeled in the figures). The adhesionstructure 300 may be substantially annular, and have a sidewallsubstantially flush with a sidewall of the target 102. The adhesionstructure 300 includes a soft metal, such as indium, a solder, or othersuitable material for improving adhesion between the target 102 and thebackplane structure 120, in some embodiments. In some embodiments, thethickness t₃₀₀ of the adhesion structure 300 is in a range of about 1 mmto about 10 mm, such as about 5 mm. The thickness t₃₀₀ less than about 1mm may provide insufficient adhesion between the target 102 and thebackplane structure 120. The thickness t₃₀₀ greater than about 10 mm maylead to deformation of the adhesion structure 300, which affectsdistance from the target 102 to the wafer 118, and thereby reducesdeposition uniformity.

FIG. 3B illustrates the backplane structure 120 and the adhesionstructure 300 in a plan view, not showing the target 102 for clarity ofdescription of the adhesion structure 300, according to someembodiments. The adhesion structure 300 is generally in direct contactwith the backplane structure 120, and includes an adhesion materiallayer 310 and a spacer 320 embedded in the adhesion material layer 310.In some embodiments, the adhesion material layer 310 includes the softmetal, such as indium, solder, or other suitable material. In someembodiments, the spacer 320 embedded in the adhesion material layer 310includes the same material as the backplane structure 120, such ascopper, aluminum, molybdenum, an alloy of any of the above, or anothersuitable material. The spacer 320 improves planarity and overalluniformity of the target 102 when attached to the backplane structure120 by improving adhesion material layer 310 flattening. The spacer 320further improves adhesion quality between the target 102 and thebackplane structure 120.

Generally the material of the spacer 320 has greater stiffness (e.g.,Young’s modulus) than the material of the adhesion material layer 310.In some embodiments, ratio of the stiffness of the spacer 320 to thestiffness of the adhesion material layer 310 is in a range of about 5 toabout 40. If the ratio is less than about 5, the spacer 320 may notprovide sufficient mechanical strength during bonding of the target 102to the backplane structure 120 through the adhesion structure 300.

The spacer 320 is fully embedded in the adhesion material layer 310, insome embodiments, such that a minimum distance d_(min) is presentbetween the spacer 320 and the sidewall of the adhesion material layer310. A maximum distance d_(max) is also shown in FIG. 3B, which may bedifferent from the minimum distance d_(min), in some embodiments. Insome embodiments, the minimum distance d_(min) is in a range of about0.1 mm to about 5 mm.

In some embodiments, the spacer 320 is rectangular in shape, havingwidth w₃₂₀ and length l₃₂₀. In some embodiments, the spacer 320 issquare in shape, such that the width w₃₂₀ is substantially equal to thelength l₃₂₀. When the spacer 320 has the rectangular or square shape,the minimum distance d_(min) is present between at least one corner ofthe spacer 320 and the sidewall of the adhesion material layer 310. Thespacer 320 generally includes four segments, e.g., two vertical segmentsand two horizontal segments, that may be monolithic or individual, inphysical contact to each other, or isolated from each other. Eachsegment may have thickness t₃₂₀ measured parallel to the major surfaceof the backplane structure 120 in a range of about 0.1 mm to about 5 mm.If the thickness t₃₂₀ is less than about 0.1 mm, the spacer 320 may notprovide sufficient mechanical strength during bonding of the target 102to the backplane structure 120. Thickness t₃₂₀ greater than about 5 mmmay introduce undesirable reduction in contact area between the adhesionmaterial layer 310 and the target 102. In some embodiments, ratio ofcross-sectional area of the spacer 320 to cross-sectional area of theadhesion material layer 310 is in a range of about 1% to about 10%. Ifthe ratio is less than about 1%, the spacer 320 may not providesufficient mechanical strength during bonding of the target 102 to thebackplane structure 120. The ratio being greater than about 10% mayintroduce undesirable reduction in contact area between the adhesionmaterial layer 310 and the target 102.

While the spacer 320 is depicted as a single rectangle or square in FIG.3B, in some embodiments, the spacer 320 may include more than onerectangle or square in a concentric configuration to improve planarityof the adhesion material layer 310 further. Introduction of additionalrectangles, squares or other shapes beyond the single square orrectangle shown in FIG. 3B may reduce contact area between the target102 and the adhesion material layer 310, as well as increase complexityand cost of manufacturing the adhesion structure 300, however such aconfiguration may yet be desirable in some PVD applications.

In some embodiments, a surface of the backplane structure 120 facing thetarget 102 includes a first machine lock pattern, which may include, forexample, an array of pyramid-shaped features including first peaks andfirst valleys. In some embodiments, a surface of the target 102 facingthe backplane structure 120 includes a second machine lock patternincluding a corresponding array of pyramid-shaped features includingsecond peaks and second valleys, where the first peaks are aligned withthe second valleys, and the second peaks are aligned with the firstvalleys. While described in terms of arrays of pyramid-shaped features,the first and second machine lock patterns may comprise arrays offeatures having other suitable shape, such as waves, teeth, or the like.In some embodiments, the first and/or second machine lock patternfurther includes grooves that align with the spacer 320. In someembodiments, the grooves are valleys of either array of pyramid-shapedfeatures. In some embodiments, the grooves are deeper or shallower thanthe first or second valleys.

In FIG. 3C, the adhesion structure 300 includes the adhesion materiallayer 310 and a spacer 321. The spacer 321 includes three spacer lines321C, 321U, 321L, each having thickness t₃₂₁, which may be substantiallythe same as the thickness t₃₂₀ described with reference to FIG. 3B.While the spacer lines 321C, 321U, 321L are shown having the samethickness t₃₂₁ in FIG. 3B, in some embodiments, at least one of thespacer lines 321C, 321U, 321L may have different thickness. The threespacer lines 321C, 321U, 321L extend in a first direction, and arearranged in a second direction substantially orthogonal to the firstdirection. In some embodiments, a spacing s₃₂₁ is present between thecenter spacer line 321C and each of the upper spacer line 321U and thelower spacer line 321L. In some embodiments, spacing between the centerspacer line 321C and the upper spacer line 321U is different fromspacing between the center spacer line 321C and the lower spacer line321L. While the spacer lines 321C, 321U, 321L are shown as substantiallystraight in FIG. 3B, at least one of the spacer lines 321C, 321U, 321Lmay be curved or bent, in some embodiments. For example, the upper andlower spacer lines 321U, 321L may each curve or bend away from thecenter spacer line 321C, such that the upper and lower spacer lines321U, 321L curve or bend away from each other. In some embodiments,length of the center spacer line 321C is greater than length of each ofthe upper and lower spacer lines 321U, 321L. In some embodiments,minimum distance d_(min) (not specifically labeled in FIG. 3C) betweeneach of the spacer lines 321C, 321U, 321L and the sidewall of theadhesion material layer 310 is substantially the same.

In FIG. 3D, the adhesion structure 300 includes the adhesion materiallayer 310 and a spacer 322. The spacer 322 has triangular shape, and hasthickness t₃₂₂, which may be substantially the same as the thicknesst₃₂₀ described with reference to FIG. 3B. In some embodiments, eachvertex of the spacer 322 is substantially equidistant (e.g., having thesame minimum distance d_(min)) from the sidewall of the adhesionmaterial layer 310, and each edge of the spacer 322 has substantiallythe same length, such that the spacer 322 may have isosceles triangularshape. In some embodiments, the spacer 322 has a shape that isnon-isosceles. The isosceles triangular shape may be desirable toprovide maximum contact area between the backplane structure 120 and thetarget 102 for shapes of the spacers 320, 321, 322 having only straightedges.

While the spacers 320, 321, 322 of FIGS. 3B-3D are depicted as includingonly straight lines or edges, it is appreciated that a number of shapesand configurations including non-straight lines or edges may be suitablefor forming a spacer that provides the benefits of improved adhesionmaterial layer 310 uniformity and target 102 uniformity. For example, anannular shaped spacer may provide a large contact area between thetarget 102 and the adhesive material layer 310. Generally, manufactureof the spacer having only straight lines or edges is simpler than thespacer including curved or bent lines or edges. The spacers 320, 321,322 also include at least three non-crossing lines or edges. In someembodiments, at least two crossing lines may be included in the spacer.Including crossing lines in the spacer may present challenges inachieving height uniformity among all lines of the spacer, particularlyat crossing points. Including only non-crossing lines or edges in thespacers 320, 321, 322 may provide better spacer height uniformity, whichin turn provides improved adhesion material layer 310 uniformity.

FIGS. 3E-3G illustrate cross-sections of the spacer 320 corresponding tothe cross-sectional line E-E′ shown in FIG. 3B, in accordance withvarious embodiments. The cross-sections shown in FIGS. 3E-3G aresimilarly representative of the spacers 321, 322 of FIGS. 3C-3D. In FIG.3E, the spacer 320 has thickness t₃₂₀ (see FIG. 3B) and height h₃₂₀. Insome embodiments, the height h₃₂₀ is in a range of about 1 mm to about10 mm, such as about 5 mm, corresponding to the thickness t₃₀₀ of theadhesion structure 300. In FIG. 3E, the spacer 320 has rectangularshape, in which the height h₃₂₀ is greater than the thickness t₃₂₀. Insome embodiments, ratio of the height h₃₂₀ to the thickness t₃₂₀ is in arange of about 1.1 to about 3. The ratio being greater than about 3 maylead to insufficient mechanical strength of the spacer 320. In someembodiments, the height h₃₂₀ may be less than the thickness t₃₂₀. InFIG. 3F, the spacer 320 is rectangular with rounded corners. Roundedcorners may improve flow of the adhesion material layer 310 around thespacer 320, which may in turn improve thickness uniformity of theadhesion material layer 310. In FIG. 3G, the spacer 320 is ovular orcircular in shape, in accordance with some embodiments. The spacer 320being ovular or circular may improve flow of the adhesion material layer310 around the spacer 320. It may be desirable for the spacer 320 tohave at least one substantially flat surface facing the backplanestructure 120 to improve stability of the spacer 320 during filling ofthe adhesion material layer 310 (described with reference to FIG. 4C).

FIGS. 4A-4E illustrate various intermediate views of the adhesionstructure 300 corresponding to operations for forming the adhesionstructure 300 by process 50 of FIG. 5 , in accordance with variousembodiments. In some embodiments, the process 50 for forming theadhesion structure 300 includes a number of operations 500, 510, 520,530 and 540. The process 50 for forming the adhesion structure 300 willbe further described according to one or more embodiments. It should benoted that the operations of the process 50 may be rearranged orotherwise modified within the scope of the various aspects. It shouldfurther be noted that additional processes may be provided before,during, and after the process 50, and that some other processes may beonly briefly described herein.

In FIG. 4A, a jig 400 is positioned on the backplane structure 120,corresponding to operation 500 of FIG. 5 . The jig 400 is configured toaid in precise placement of the spacer 320 in a subsequent operation.The jig 400 may be placed by hand by an operator, or may be placed by amachine in an automated process, in some embodiments. Inner width andlength of the jig 400 may be similar to, or substantially equal to, thewidth w₃₂₀ and the length l₃₂₀ of the spacer 320, so as to secure thespacer 320 precisely.

In FIG. 4B, the spacer 320 is positioned by guidance of the jig 400,corresponding to operation 510 of FIG. 5 . In some embodiments, thespacer 320 comprises four individual segments, which may be placed inphysical contact with upper, lower, right, and left sidewalls of the jig400. In some embodiments, the spacer 320 is a monolithic structureformed prior to placement in the jig 400. In some embodiments, thespacer 320 is formed as a single piece using a computer numericalcontrol (CNC) lathe for precise machining of the spacer 320. The spacer320 may be positioned by hand or machine by placing the spacer 320inside the jig 400, in some embodiments.

In FIG. 4C, the spacer 320 and the jig 400 are embedded by formingadhesion material layer 310' corresponding to operation 520 of FIG. 5 .In some embodiments, the adhesion material layer 310' is formed byinjection. In some embodiments, the adhesion material layer 310' isformed as at least one piece, and placed onto the backplane structure120 surrounding the spacer 320 and the jig 400. In some embodiments, theadhesion material layer 310' is formed by heating a material of theadhesion material layer 310' to a temperature greater than about 160° C.prior to injecting or placing the adhesion material layer 310' on thebackplane structure 120 and laterally surrounding the spacer 320 and thejig 400.

In FIG. 4D, the jig 400 is removed, corresponding to operation 530 ofFIG. 5 . In some embodiments, following removal of the jig 400, thematerial of the adhesion material layer 310' flows to fill in a spaceleft by removal of the jig 400, thereby forming the adhesion materiallayer 310. In some embodiments, the adhesion material layer 310' isheated during and/or following removal of the jig 400 to promote fillingof the space left by the removal of the jig 400. In some embodiments,the space is not filled immediately following removal of the jig 400,but is instead filled during attachment of the target 102 to thebackplane structure 120.

In FIG. 4E, the target 102 is attached to the backplane structure 120 bythe adhesion structure 300 including the spacer 320, corresponding tooperation 540 of FIG. 5 . FIG. 4E shows the target 102 overlying thebackplane structure 120, with the spacer 320 shown in phantom. In someembodiments, the target 102 is formed prior to being attached to thebackplane structure 120. In some embodiments, the target 102 is pressedonto the adhesion structure 300. In some embodiments, the adhesionmaterial layer 310 is pressed into the space left by the jig 400 duringpressing of the target 102 onto the adhesion structure 300. In someembodiments, the target 102 and the adhesion structure 300 are heatedduring the pressing. In some embodiments, the target 102 is attached tothe backplane structure 120 by a bonding process conducted at atemperature greater than about 160° C. In some embodiments, the adhesionmaterial layer 310 is further pressed outward toward the sidewall of thebackplane structure 120 during the pressing of the target 102 onto theadhesion structure 300. Generally, following attachment of the target102 to the backplane structure 120, the spacer 320 is in physicalcontact with the backplane structure 120 and the target 102. The spacer320 improves flattening of the adhesion material layer 310, such thatthe target 102 attached to the backplane structure 120 by the adhesionstructure 300 has high uniformity, which leads to better powerperformance and thin film yield.

When the first and second machine lock patterns (refer to FIG. 3A) arepresent, the first and second machine lock patterns may improve adhesionbetween the backplane structure 120 and the target 102 through theadhesion structure 300, for example, by increasing contact area betweenthe adhesion structure 300 and the backplane structure 120 and/or thetarget 102.

Embodiments may provide advantages. The adhesion structure 300 includingthe spacer 320, 321, or 322 has improved flatness and uniformity of theadhesion material layer 310 in which the spacer 320, 321, or 322 isembedded, which in turn improves thin film deposition yield, and alsoimproves thermal conductivity and power performance of the target 102due to reduced arcing. The machine lock patterns further improveadhesion between the target 102 and the backplane structure 120.

In accordance with at least one embodiment, a deposition apparatuscomprises a process chamber, a wafer support in the process chamber, abackplane structure having a first surface in the process chamber facingthe wafer support, a target having a second surface facing the firstsurface and a third surface facing the wafer support, and an adhesionstructure in physical contact with the backplane structure and thetarget. The adhesion structure comprises an adhesion material layer, anda spacer embedded in the adhesion material layer.

In accordance with at least one embodiment, a deposition targetstructure comprises a backplane structure, a target, and an adhesionstructure in physical contact with the backplane structure and thetarget. The adhesion structure comprises an adhesion material layerhaving a first stiffness, and a spacer embedded in the adhesion materiallayer, the spacer having a second stiffness greater than the firststiffness, and height substantially equal to height of the adhesionmaterial layer.

In accordance with at least one embodiment, a method comprises:positioning a jig on a backplane structure of a physical vapordeposition target; positioning a spacer comprising a first material onthe backplane structure by guidance of the jig; forming an adhesionstructure by embedding the spacer in an adhesion material layercomprising a second material different from the first material; andattaching a target to the backplane structure by the adhesion structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-16. (canceled)
 17. A method, comprising: positioning a jig on abackplane structure of a physical vapor deposition target; positioning aspacer comprising a first material on the backplane structure byguidance of the jig,wherein inner width and length of the jig aresubstantially equal to width and length of the spacer, respectively;forming an adhesion structure by embedding the spacer in an adhesionmaterial layer comprising a second material different from the firstmaterial; and attaching a target to the backplane structure by theadhesion structure.
 18. The method of claim 17, wherein attaching thetarget includes bonding the target to the adhesion structure at atemperature of at least 160° C.
 19. The method of claim 17, whereinforming the adhesion structure by embedding the spacer in the adhesionmaterial layer includes: forming the adhesion structure by embedding thespacer in the adhesion material layer comprising the second materialhaving lower stiffness than the first material.
 20. The method of claim17, further comprising: forming the spacer by a computer numericalcontrol lathe.
 21. The method of claim 17, wherein the minimum distancebetween the spacer and an outer sidewall of the adhesion material layeris in a range of about 0.1 mm to about 5 mm.
 22. The method of claim 17,wherein a thickness of the spacer is in a range of about 0.1 mm to about5 mm.
 23. The method of claim 22, wherein a ratio of height of thespacer to the thickness of the spacer is in a range of about 1.1 toabout
 3. 24. The method of claim 17, wherein the spacer is in physicalcontact with the backplane structure and the target.
 25. The method ofclaim 1, wherein the spacer is the same material as the backplanestructure, and a different material than the adhesion material layer.26. A method, comprising: positioning a jig on a backplane structure ofa physical vapor deposition target; positioning a spacer on thebackplane structure by guidance of the jig, wherein inner width andlength of the jig are substantially equal to width and length of thespacer, respectively; forming an adhesion structure by embedding thespacer and the jig in an adhesion material layer; removing the jig fromthe adhesion material layer; and attaching a target to the backplanestructure by the adhesion structure with the jig removed.
 27. The methodof claim 26, wherein a ratio of the stiffness of the spacer to thestiffness of the adhesion material layer is in a range of about 5 toabout
 40. 28. The method of claim 26, wherein the spacer is closedtriangular in the plane of the major surface of the backplane structure.29. The method of claim 26, wherein the spacer is closed rectangular inthe plane of the major surface of the backplane structure.
 30. A method,comprising: positioning a jig on a backplane structure of a physicalvapor deposition target, the backplane structure having a first machinelock pattern; positioning a spacer on the backplane structure byguidance of the jig; forming an adhesion structure by embedding thespacer and the jig in an adhesion material layer; removing the jig fromthe adhesion material layer; and attaching a target to the backplanestructure by the adhesion structure with the jig removed, the targethaving a second machine lock pattern corresponding to the first machinelock pattern.
 31. The method of claim 30, wherein the spacer includes atleast three non-crossing lines extending in a first direction, andarranged along a second direction substantially orthogonal to the firstdirection.
 32. The method of claim 30, wherein a surface of thebackplane structure facing the target includes the first machine lockpattern, and the first machine lock pattern includes a first array ofpyramid-shaped first peaks and first valleys.
 33. The method of claim32, wherein a surface of the target facing the backplane structureincludes the second machine lock pattern, and the second machine lockpattern includes a second array of pyramid-shaped second peaks andsecond valleys.
 34. The method of claim 33, wherein the first peaks arealigned with the second valleys, and the second peaks are aligned withthe first valleys.
 35. The method of claim 30, wherein the first andsecond machine lock patterns comprise respective arrays of waves orrespective arrays of teeth.
 36. The method of claim 30, wherein thesecond machine lock pattern includes grooves that align with the spacer.